Raman PL And Hall Effect Studies Of Cdse Thin Film Deposited By Chemical Bath Deposition

CdSe thin films were fabricated on glass substrate by chemical bath deposition method. The films were deposited by keeping the deposition time a constant and also by keeping solution bath temperature a constant. Some of the deposited films were annealed . The as-deposited and annealed films were subjected to various spectroscopic studies such as Raman Spectroscopy and Photo luminescence spectroscopy. The hall effect measurement shows that CdSe is an n-type semiconductor and its resistivity decreases on annealing