Visible Photoluminescence Enhancement Of Silicon Oxide

Abstract We have been proposed a treatment method for the visible photoluminescence enhancement of SiO2 layer thermally grown on Si100 wafer by surface texture modification. We have used liquid nitrogen LN2 as treatment method. That method applied at different exposure time from 10min to 30sec.Room temperature photoluminescence PL of treated SiO2Si samples was studied using the 514.5 nm line of an Ar Laser.PL signal in the wavelength rang 530-880 nm was observed .AFM and SEM have used to study the surface texture change. Samples of an exposure time 1 min 30sec show emission at 580-880 nm with a maximum PL intensity .We have observed the PL intensity and spectra shape of treated samples are dependent on the surface texture modification. The visible PL is enhanced 2-fold by the surface treatment. The origin of the visible PL emission of SiO2 has been investigated on QCLC model.