Efficiency Improvement Of Crystalline Silicon Solar Cells By Optimizing The Doping Profile Of Pocl3 Diffusion

Abstract The emitter formation constitutes a crucial step in the manufacturing of the crystalline silicon solar cells. Several techniques are used in the photovoltaic industry and the most well-known one is based on the POCl3 diffusion in cylindrical quartz tube. Despite the efficiency of this technique to be reproducible economic and simple it presents the major inconvenient to have a heavily doped region near the surface which induces a high minority carrier recombination. To limit this effect an optimisation of diffused phosphorous profiles is required. Our modelling of phosphorus profiles is summarized in the presence of an erfc distribution near to the surface and other Gaussian distribution in the bulk region of the emitter. However this work is devoted to study the effects of the temperature diffusion time surface concentration and doping profile on the crystalline silicon solar cells performances by using the new parameters. The first results of our numerical modelling carried out by the Silvaco Atlas simulation package show the possibility to improve the efficiency by 2.78. This result is also confirmed by the IQE calculus which present an obvious enhancement in short wavelength region 380-450nm about 23.