Electrical Properties Of Nitrogen Doped Amorphous Carbon Films Fromethanol Precursor

Abstract The nitrogen doped amorphous carbon a-CN thin films were synthesized for the first time by using mixing of nitrogen gas argon and ethanol precursor by bias assisted pyrolysis-CVD in the range of 250oC to 550oC with fixed negative bias of -50V in 1h deposition. The a-CNthin films were characterized by current-voltage measurement UVVIS spectrophotometer surface profiler and atomic force microscopy. The resistivity of a-CN thin films in the range 250oC-550oC was 4.97x10726937.cm 2.66x10526937.cm 1.974x10426937.cm3.63x10326937.cm and 4.44x10326937.cm and 1.73x10426937.cm respectively. It was found that a-CN thin filmshave responded with photon by created electron hole pair where the highest photo responseof a-CN film was found at 350oC.The substrate of deposition temperatures with the help of constant dc voltage influenced the electrical properties of a-C thin films.