Electrical Properties Of Intrinsic Amorphous Carbon Films From Ethanol Precursor

Abstract The intrinsic amorphous carbon a-C thin films were successfully prepared by via a bias assisted pyrolysis-chemical vapor deposition CVD using ethanol as a carbon source. The effect of deposition temperature on the electrical and structural properties was investigated. The a-C thin films were characterized by current voltage I-V measurement surface profiler and atomic force microscopy AFM. The AFM measurements and conductivity result show the surface roughness and resistivity of a-C films decreases with increasing of deposition temperatures .Linear forms were obtained from aurum and a-C film contact. The resistivity of intrinsic a-C thin films in the range of 250oC to 550oC is 22x10826937.cm 2.01x10826937.cm 4.44x10726937.cm 7.26x10726937.cm 6.53x10726937.cm 4.97x10726937.cm and 4.32x10726937.cm respectively. Meanwhile its conductivity is 2.07x10-8 Scm-1 1.58x10-8 Scm-1 2.25x10-8 Scm-1 1.38x10-8 Scm-1 1.53x10-8 Scm-1 2.01x10-8 Scm-1 and 2.32x10-8 Scm-1 respectively. The highest and lowest photo responses were found at 350oC and 500oC respectively. This electrical properties result showed the custom-made of bias assisted pyrolysis-CVD can produced the semiconducting a-C film comparably with other conventional deposition method.