Physical Properties Of Nitrogen Doped Amorphous Carbon Films From Ethanol Precursor For Solar Cell Applications

AbstractThe nitrogen doped amorphous carbon a-CN thin films were synthesized for the first time by mixing of nitrogen gas argon and ethanol precursor via a bias assisted pyrolysis-CVD in the range of 250oC to 550oC with fixed negative bias of -50V in 1h deposition. The a-CN thin films were characterized by current-voltage measurement UVVIS spectrophotometer surface profiler and atomic force microscopy. The resistivity of a-CN thin films in the range 250oC-550oC was 4.97x10726937.cm 2.66x105 26937.cm 1.974x10426937.cm 3.63x10326937.cm and 4.44x10326937.cm and 1.73x10426937.cm respectively. It was found that a-CN thin films have responded with photon by created electron hole pair where the highest photo response of a-CN film was found at 350oC. The deposition temperatures with the help of constant dc voltage influenced the physical properties of a-C thin films.