Surface Morphology And Photoluminescence Properties Of A-GaAsSe Detector

Abstract GaAsSe films with thickness 0.5 26956m have been prepared by flash evaporation technique on glass substrate under vacuum of 10-5mbar. These films have been annealed at different temperatures 373 473K. The surface morphological characteristics by atomic force microscope AFM. The roughness was decrease with increasing annealing temperature for amorphous film but start upward when the films crystallized. The grain size increases with increasing annealing temperature upto temperatures 373473 K . The spectral response of GaAsSe was studied. The values of responsively specific detectivity and quantum efficiency increases with increases annealing temperature but NEP decreases with increases annealing temperature. The Photoluminescence peak of a-GaAsSe films located at 832.215 829.87 and 827.538 for temperature at RT100 and 200 oC which corresponding to an energy gap 1.49 1.494 and 1.498 eV respectively. This may be associated which that the electron in bottom of conduction band recombines with hole in the valance band.