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Characterization Of Microwave Obtained Zno Thin Films By RF Magnetron Sputtering

Journal: International Journal of Scientific & Technology Research (Vol.4, No. 2)

Publication Date:

Authors : ; ; ; ; ;

Page : 87-91

Keywords : Index Terms Zinc oxide thin films; X-ray diffraction; crystalline property; refractive index; Electromechanic coupling coefficient.;

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Abstract We have grown ZnO thin films on glass and Si 001 substrates by r.f magnetron sputtering using metallic zinc target. The crystalline property of the films were observed to vary with the structural properties used. X-ray diffraction XRD measurement showed that the substrate temperature ZnO films exhibited preferred c-axis oriented 002. A study has been made of the influence parameters prepared on the film refractive index. They exhibited the refractive index of 1.97 a c-axis orientation of below 0.32 FWHM of X-ray rocking curves and an energy gap of 3.3 eV at room temperature. It was found that a RF power of 50 W target to substrate distance 70 mm very low gas pressures of 3.35x10-3 Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity. The network analyzer shows losses are -5dB at a k33 0.26 experimental.

Last modified: 2015-06-28 04:08:23