Characterization Of Microwave Obtained Zno Thin Films By RF Magnetron Sputtering
Journal: International Journal of Scientific & Technology Research (Vol.4, No. 2)Publication Date: 2015-02-15
Authors : Roger Ondo-Ndong; Hugues Martial Omanda; Honore Gnanga; Brice Sorli; Alain Foucaran;
Page : 87-91
Keywords : Index Terms Zinc oxide thin films; X-ray diffraction; crystalline property; refractive index; Electromechanic coupling coefficient.;
Abstract
Abstract We have grown ZnO thin films on glass and Si 001 substrates by r.f magnetron sputtering using metallic zinc target. The crystalline property of the films were observed to vary with the structural properties used. X-ray diffraction XRD measurement showed that the substrate temperature ZnO films exhibited preferred c-axis oriented 002. A study has been made of the influence parameters prepared on the film refractive index. They exhibited the refractive index of 1.97 a c-axis orientation of below 0.32 FWHM of X-ray rocking curves and an energy gap of 3.3 eV at room temperature. It was found that a RF power of 50 W target to substrate distance 70 mm very low gas pressures of 3.35x10-3 Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity. The network analyzer shows losses are -5dB at a k33 0.26 experimental.
Other Latest Articles
- The Influence Of CSR Awareness On Consumer Purchase Decision Of A Telecommunication Network In Ghana A Case Of La Nkwantanag Madina Municipality
- The Relation Between An Understanding Of Muslim Brotherhood Concept And Social Solidarity In Islamic Community At Suburban Area Case Study At Palasari Cibiru Bandung 2011
- Recycling Waste Bakelite As A Carbon Resource In Ironmaking
- The Effect Of Patient Education On Health Related Quality Of Life Among Allergic Rhinitis Patients In Cairo University Outpateint Clinics Egypt
- Web Development Technology-PHP. How It Is Related To Web Development Technology ASP.NET
Last modified: 2015-06-28 04:08:23