Analysis Report of Gate Driver Circuit for TFT-LCD
Journal: International Journal of Scientific Engineering and Technology (IJSET) (Vol.2, No. 12)Publication Date: 2013-12-01
Authors : Aman Saraf Abhishek M. Tripathi;
Page : 1183-1186
Keywords : Threshold voltage shift; Power consumption; Stress effect; Fluctuation noise.;
Abstract
Gate driver circuit for TFT LCD can be designed by different technique such as standard five mask process designed on glass substrate using coupled clock logic, center offset technique, integrated five transistor & one capacitor approach with a silicon hydrogenated in multi phase clock mode, combination of a-Si:H process. This paper presents brief analysis of this application on the basis of following parameter by such as capacitor coupling effect, threshold voltage shift, and power consumption, life time of gate driver, floating row lines, driving speed & output stability.
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Last modified: 2013-12-06 11:02:06