PERFORMANCE OF LEAKAGE POWER MINIMIZATION TECHNIQUE FOR CMOS VLSI TECHNOLOGY
Journal: ICTACT Journal on Communication Technology (IJCT) (Vol.3, No. 2)Publication Date: 2012-06-01
Authors : T. Tharaneeswaran; S. Ramasamy;
Page : 557-562
Keywords : Leakage currents; current comparator; charge pump; VLSI; LPMT;
Abstract
Leakage power of CMOS VLSI Technology is a great concern. To reduce leakage power in CMOS circuits, a Leakage Power Minimiza-tion Technique (LPMT) is implemented in this paper. Leakage cur-rents are monitored and compared. The Comparator kicks the charge pump to give body voltage (Vbody). Simulations of these circuits are done using TSMC 0.35?m technology with various operating temper-atures. Current steering Digital-to-Analog Converter (CSDAC) is used as test core to validate the idea. The Test core (eg.8-bit CSDAC) had power consumption of 347.63 mW. LPMT circuit alone consumes power of 6.3405 mW. This technique results in reduction of leakage power of 8-bit CSDAC by 5.51mW and increases the reliability of test core. Mentor Graphics ELDO and EZ-wave are used for simulations.
Other Latest Articles
- PERFORMANCE EVALUATION OF AN ALTERNATIVE CONTROLLER FOR BLUETOOTH SERVICE DISCOVERY
- ADVANCED DYNAMIC FRAMED SLOTTED ALOHA
- ENERGY EFFICIENT ROUTING PROTOCOLS FOR WIRELESS AD HOC NETWORKS ? A SURVEY
- ESTIMATION OF WIDE BAND RADAR CROSS SECTION (RCS) OF REGULAR SHAPED OBJECTS USING METHOD OF MOMENTS (MOM)
- CONFORMAL MAPPING ANALYSIS OF VARIOUS COPLANAR WAVEGUIDE STRUCTURES
Last modified: 2013-12-06 13:25:46