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A COMPARITIVELY ANALISIS OF VARIOUS CMOS FINFET STRUCTURE

Journal: International Journal of Engineering Sciences & Research Technology (IJESRT) (Vol.6, No. 4)

Publication Date:

Authors : ; ;

Page : 215-220

Keywords : Circuit design; Fin FETs; Layout; Leakage power; Power optimization;

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Abstract

Fin - type field - effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nano scale. Fin FETs are double - gate devices. The two gates of a FinFET can either be shorted for higher performance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space. This chapter provides an introduction to various interesting Fin FET logic design styles, novel circuit designs, and layout considerations.

Last modified: 2017-04-17 19:05:19