A COMPARITIVELY ANALISIS OF VARIOUS CMOS FINFET STRUCTURE
Journal: International Journal of Engineering Sciences & Research Technology (IJESRT) (Vol.6, No. 4)Publication Date: 2017-04-30
Authors : Ragini Soni; Jyotsna Sagar;
Page : 215-220
Keywords : Circuit design; Fin FETs; Layout; Leakage power; Power optimization;
Abstract
Fin - type field - effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nano scale. Fin FETs are double - gate devices. The two gates of a FinFET can either be shorted for higher performance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space. This chapter provides an introduction to various interesting Fin FET logic design styles, novel circuit designs, and layout considerations.
Other Latest Articles
Last modified: 2017-04-17 19:05:19