Study of Electron Transport in Fullerene (C60) Quantum Confined Channel Layer Based Field Effect Transistor

In this work, we modelled a simple n-channel Si Metal-Quantum confined layer-Semiconductor Field Effect Transistor (MQSFET), which resembles exactly as the conventional Si Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) where SiO2 dielectric layer is replaced with a wide band gap C60 quantum confined layer of thickness 3nm and gold (Ψ=5.1eV) as metal contact. The capacitance and voltage characteristics at different temperatures from 100 K to 500 K and energy band gap are studied using Multi-dielectric Energy Band Diagram Program (MEBDP) simulation software, performed current-voltage transistor characteristics and analyzed the mobility of the charge carrier in the MQS sandwiched device structure using the Caughey-Thomas high saturation mobility model and the Lombardi surface mobility model. In these studies, we inferred a very low threshold voltage, when the donor concentration in the p-Si substrate is tuned between 1E16 to 1E17 cm-3 and a saturated flow of nanoamperes range of charge carrier at a low gate potential is even possible.