THE INFLUENCE OF TITANIUM ON THE PROPERTIES OF THE VOLUME AND INTERFACE OF Si-SiO2 OF SILICON MIS-STRUCTURES

Using the methods of non-stationary capacitance spectroscopy and high-frequency capacitancevoltage characteristics the influence of titanium on the non-equilibrium processes in the bulk and at the interface of SiSiO2 MIS-structures based on n-Si is investigated. It was found out that the presence of titanium impurities in the Si-wafer of MIS-structures leads to an increase in Nss and the appearance of three distinct peaks associated with the deep levels of Ti in Si.