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INFLUENCE OF GADOLINIUM ATOMS ON THE PARAMETERS OF MOS STRUCTURES
Journal: Science and world (Vol.1, No. 44)Publication Date: 2017-04-20
Authors : Daliev Kh.S.;
Page : 15-16
Keywords : MOS-structure; impurity; gadolinium; doping; surface-state density; interface of Si-SiO2.;
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Abstract
By means of the CC-DLTS methods and high-frequency volt-farad characteristics the influence of gadolinium impurity on electrophysical properties of MOS-structures is investigated. It is shown that presence of electroneutral gadolinium impurity at MOS-structures leads to reduction of surface-state density of structures, but noticeable change in distribution of Nss on Eg is not observed.
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Last modified: 2017-06-01 17:07:28