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DESIGN CRITERIA OF LDD MOSFET DEVICES
Journal: International Journal of Advances in Engineering & Technology (IJAET) (Vol.10, No. 3)Publication Date: 2017-06-30
Authors : Armando Casolino; Roberto Marani; Anna Gina Perri;
Page : 299-308
Keywords : MOSFET Devices; Drain Engineering; LDD MOSFET structure; TCAD Simulation.;
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Abstract
In this paper we present the design criteria of Lightly Doped Drain (LDD) MOSFETs through the study of the influence of the n- doping of drain/source on the electric field, but taking into account also the impact of LDD on series resistance of the device and the channel length contribution on breakdown voltage reduction.
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Last modified: 2017-07-19 18:26:54