Deposition and Characterisation of Zinc Telluride as a Back Surface Field Layer in Photovoltaic Applications

Zinc Telluride films developed by Thermal evaporation technique has wide application in photovoltaic and optoelectronic applications. ZnTe films at 423K and 473K were deposited onto glass substrates and annealed at 573K. Structural studies were carried out by XRD technique and Morphological study was done by AFM which in turn shows the high intensity peak at annealed condition. Optical properties was studied by UV-VIS spectrometer to find the energy distribution and thereby, bandgap is calculated, which ranges from 1.89eV to 2.42eV. Raman analysis was done to find the phonon distribution and molecular longitudinal modes.