Optical And Electrical Properties Of P-Type Si100 Modification In Visible Region For Silicon Based Microphotonics

Abstract The development of Silicon surface texture would revolutionize the growing field of Microphotonics and its applications in different fields .The objective of this study is to modify the Optical and Electrical properties of Silicon in visible region at room temperature. So for that purpose we have used thermal treatment method with applied M-field 1000G.. We have found that p-type Si is more response to this method. Optical and Electrical study were carried out using CW photoluminescence emission technique Ar Laser emitting at 514.5 nm Ellipsometry 632.8nm AFM and IV. We were obtained increasing emission intensity in band 2.0-1.6 eV and an improvement in PL emission profile. We were recorded irregular behaviors in extinction coefficient values of treated samples. In this study we recorded at the first time different behavior in IV and change in surface texture which provides new surface profile for improvements of Si technology.