Effects of Deposition Temperature on the Properties of ZnO Films Grown by High Power Impulse Magnetron Sputtering

In this paper, we report the ZnO thin films deposited by High Power Impulse Magnetron Sputtering (HiPIMS) technique on glass substrates. The role of deposition temperature on properties of zinc oxide is explored. We note that the deposition rate increases firstly and then decreases along with the increase of substrate temperature. The average roughness (Ra) of ZnO thin film also depends on the growth temperature, at 300°C Ra is smoothest at 0.8 nm, while Ra of thin films deposited at room temperature, 200°C, 250°C, 280°C and 360°C all are higher. The results of the electron concentration, mobility, and resistivity exhibits that the ZnO films deposited at 300°C have better properties: a high carrier concentration, a high mobility, and a low resistivity.