An Ultra-Low-Power 12t Cam Cell Based on Threshold Voltage Techniques

This paper exhibits Thirteen-transistor (12T) CAM cell working in the subthreshold area. In the proposed 12T CAM cell, an appropriate read operation is given by stifling the channel actuated boundary bringing down impact and controlling the body source voltage power. Appropriate utilization of low-edge voltage (LVt) transistors in the proposed plan lessens the read access time and upgrades the dependability in the subthreshold area. In the proposed cell, a typical piece line is utilized in the read and composes operations. This configuration prompts a bigger compose edge without utilizing additional circuits. The recreation results of 90nm CMOS innovation illustrate a qualified execution of the proposed CAM cell regarding power scattering, power delay item, compose edge, read access time and affect the ability to process, voltage furthermore, temperature varieties when contrasted with the other most effective low-voltage CAM cells beforehand introduced in the writing mode.