THE INFLUENCE OF THERMAL ANNEALING ON THE ION - IMPLANTED ATOMS ST ATE OF Mn IN Si

The research results of implanted atoms distribution profiles of Mn in Si depending on the dose and annealing temperature by method of Rutherford backscattering are given in this work. The received results confirm the similar data obtained by secondary ion mass - spectrometry. The influence of thermo - annealing on distribution of Mn and other impurity, in particular, of oxygen is studied. The possibility of use of the Rutherford backscattering method for the analysis of concentration distribution of the alloye d impurity and interaction of impurity among themselves is presented.