Effect of Ion Refocusing and Focusing at the Ne and Ar Small Angle Ion Bombardment on the Surface III-V Compound Semiconductors
Journal: International Journal of Trend in Scientific Research and Development (Vol.2, No. 5)Publication Date: 2018-09-26
Authors : Karimov Muxtor Karimberganovich Sadullaev Shuxrat Ravshanovich Sobirov Ravshanbek Yuldashbaevich;
Page : 110-113
Keywords : ion focusing; ion refocusing; computer simulation; ion scattering; semi channels;
Abstract
In this paper presents small angle ion scattering of noble gases from the III-V compound semiconductor surfaces have been studied by the method of computer simulation. The effect ion focusing and refocusing was studied. The coefficient of scattering ions has been calculated. Karimov Muxtor Karimberganovich | Sadullaev Shuxrat Ravshanovich | Sobirov Ravshanbek Yuldashbaevich"Effect of Ion Refocusing and Focusing at the Ne and Ar Small Angle Ion Bombardment on the Surface III-V Compound Semiconductors" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-2 | Issue-5 , August 2018, URL: http://www.ijtsrd.com/papers/ijtsrd15772.pdf http://www.ijtsrd.com/physics/other/15772/effect-of-ion-refocusing-and-focusing-at-the-ne-and-ar-small-angle-ion-bombardment-on-the-surface-iii-v-compound-semiconductors/karimov-muxtor-karimberganovich
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Last modified: 2018-09-26 21:10:30