STUDY OF CONVERSION EFFICIENCY AND INTERNAL AND EXTERNAL QUANTUM EFFICIENCIES Of InGaAsSb 0.53 eV
Journal: International Journal of Engineering Sciences & Research Technology (IJESRT) (Vol.7, No. 9)Publication Date: 2018-09-30
Authors : Waly DIALLO Moulaye DIAGNE Nacire MBENGUE Omar. A. NIASSE Cheikh Bassirou BA;
Page : 294-299
Keywords : Thermophotovoltaic; InGaAsSb; SiC; power; electrique; InGaAsSb;
Abstract
The work established on this article highlights the importance of the tandem SiC-InGaAsSb pair which according to the literature offers real hopes in the Thermophotovoltaic conversion (TPV). The parameters studied on this article are the absorption coefficient which gives us an assessment of the absorption quality of InGaAsSb. For an impeccable evaluation of the conversion of the thermophotovoltaic cell, we worked on the internal and external quantum efficiencies but also on the conversion efficiency. A comparative study has also been made on these efficiencies and absorption coefficient. These parameters are studied according to the (dimensionless) normalization quantity u=E/kT=hc/(hkT.
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Last modified: 2018-10-06 20:53:30