THE FORMATION OF RADIATION DEFECTS IN SILICON, DOPED WITH VANADIUM

The processes of formation of radiation defects in silicon doped with vanadium are investigated by means of non-stationary capacitive spectroscopy of deep levels. It is shown that irradiation leads to non-linear changes in the concentration of deep levels associated with the atoms of vanadium and the transformation of DLTS spectra of the samples n-Si because of the proximity of the levels of A-centers and of EC-0.22 eV. The presence of vanadium impurities in silicon slows down the formation of A-centers and prevents the introduction of E-centers in samples Si