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RESEARCH OF FEATURES OF DEEP CENTERS FORMATION IN SILICON WITH AN ADMIXTURE OF PLATINUM
Journal: Science and world (Vol.1, No. 63)Publication Date: 2018-11-26
Authors : Utamuradova Sh.B. Olimbekov Z.O.;
Page : 31-33
Keywords : silicon; impurity; platinum; diffusion; technological mode; deep level.;
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Abstract
The features of defect formation in platinum-doped silicon were investigated by means of capacitive spectroscopy. It is found that the high-temperature diffusion of Pt atoms in Si leads to the formation of four deep levels with fixed ionization energies: EC–0.21 eV and EC–0.25 eV, EV+0.20 eV and EV+0.41 eV.
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Last modified: 2018-12-04 16:31:30