ResearchBib Share Your Research, Maximize Your Social Impacts
Sign for Notice Everyday Sign up >> Login

RESEARCH OF FEATURES OF DEEP CENTERS FORMATION IN SILICON WITH AN ADMIXTURE OF PLATINUM

Journal: Science and world (Vol.1, No. 63)

Publication Date:

Authors : ;

Page : 31-33

Keywords : silicon; impurity; platinum; diffusion; technological mode; deep level.;

Source : Downloadexternal Find it from : Google Scholarexternal

Abstract

The features of defect formation in platinum-doped silicon were investigated by means of capacitive spectroscopy. It is found that the high-temperature diffusion of Pt atoms in Si leads to the formation of four deep levels with fixed ionization energies: EC–0.21 eV and EC–0.25 eV, EV+0.20 eV and EV+0.41 eV.

Last modified: 2018-12-04 16:31:30