THE STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF SI- DOPED ALINGAN QUATERNARY

The structure and optical properties of Si-doped AlxInyGa1-x-yN alloys are grown on sapphire (0001) substrates grown by MBE are investigated. The measurement of the reflectance, refractive index and AFM analysis are carried out. AFM images of Si-doped AlxInyGa1-x-in alloys thin film exhibits different surface texture. A smooth surface texture is observed and . The AFM images of Si-doped AlxInyGa1-x- yN alloys thin films involve of several columnar arranged grains with identical particle size scattering. The roughness (RMS) values of the grown AlxInyGa1-x-yN alloys 3.03 nm is obtained. The reflectivity spectrum of the nitride thin films shows different peaks scattering happens which confirm the presence of separated valence groups which prompt to three in number absorption excitons.