INTEGRATED HETEROPHOTODIODE STRUCTURES ON THE BASIS OF ALXGA1-XP AND GAYIN1-YP P-N TRANSITIONS

In this article the structures and photoelectrical features of two transitional heterophotodiodes on the basis of AlxGaIn1-хP (0 ? x?< 0.6) and GayIn1-уP (0.6? у?< 0.7), and their main parameters are given. It is shown that the examined heterophotodiodes possess a divided spectral sensitivity in the violet and ultra violet lines of the spectrum, which are perspective in the systems of absorbed spectral photometric analysis and control of the combustion of organic substances by the differential method.