Linear CMOS LNA
Journal: International Journal of Trend in Scientific Research and Development (Vol.3, No. 1)Publication Date: 2018-11-01
Authors : Gaurav R. Agrawal Leena A. Yelmule;
Page : 829-835
Keywords : Low noise amplifier (LNA); complementary metal oxide semiconductor (CMOS); nonlinearity; third-order input intercept point (IIP3); third-order intermodulation distortion (IMD3); common source amplifier; post linearization;
Abstract
In this work, a highly linear Cascode CMOS LNA is presented. Linearity issues in RF receiver frontend are discussed, followed by an analysis of the specifications and requirements of a LNA through consideration of multi-standard LNA. Device non-linear characteristics cause linearity problems in the RF front-end system. To solve this problem, Post linearization technique for inductively degenerated L-deg common source Cascode Low Noise Amplifier is presented, which improves linearity performance with small gain loss and current consumption as consequence.The LNA presented has 1.0GHz - 3.2GHz frequency range designed using TSMC 0.18µm CMOS process. The linearized LNA achieves an IIP3 of 5.0 dBm, with P-1dB of -14 dBm, 13.8 dB gain max , NF 2.03dB and power utilization of 19.4 mWat 1.8 volt power supply Gaurav R. Agrawal | Leena A. Yelmule "Linear CMOS LNA" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-3 | Issue-1 , December 2018, URL: http://www.ijtsrd.com/papers/ijtsrd19087.pdf
http://www.ijtsrd.com/engineering/electronics-and-communication-engineering/19087/linear-cmos-lna/gaurav-r-agrawal
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