INFLUENCE OF WOLFRAMIUM ON CHARACTERISTICS OF SILICON METAL-INSULATOR-SEMICONDUCTOR STRUCTURES

The effect of wolframium impurity on the characteristics of silicon MIS structures was investigated using capacity spectroscopy and high-frequency capacity-voltage characteristics. It has been found that the presence of electro-active W atoms in the silicon wafer of MDP structures leads to an increase in Nss structures and the appearance of peaks associated with the levels of tun wolframium in silicon.