Growth and characterization of 4-N, N-dimethylamino-4’N’-methyl- stibazolium p-toluenesulphonate (DAST) crystal-A potential THz emitter

We have adopted slope nucleation coupled slow evaporation method for the growth of high quality 4-N, N-dimethylamino-4-N-methylstilbazoliumtosylate (DAST) crystals. The structure of the crystal was studied by single crystal X-ray diffraction analyses. The FTIR results reveal the existence of the vinyl groups and their corresponding vibrational modes. The linear and nonlinear optical properties are studied by UV-Vis absorption and SHG test. The melting point and thermal behavior of DAST were investigated using differential scanning calorimetric (DSC) and thermogravimetric(TG) analyses (TGA). The electrical properties of the crystal are investigated by dielectric and photoconductivity measurements.