Study of Power Loss Reduction in SEPR Converters for Induction Heating through Implementation of SiC Based Semiconductor Switches

This paper presents a power loss analysis for a Single Ended Parallel Resonance (SEPR) Converter used for induction heating. The analysis includes a comparison of the losses in the electronic switch when the circuit is realized using a conventional Silicon (Si) based IGBT or when using Silicon Carbide (SiC) based MOSFET. The analysis includes modelling and simulation as well as experimental verification through power loss and heat dissipation measurement. The presented results can be used as a base of comparison between the switches and can be a starting point for efficiency based design of those types of converters.