MICROFABRICATION PROCESS of GRAPHENE FIELD EFFECT DEVICES and INVESTIGATION of LITHOGRAPHIC RESIDUES by SURFACE ENHANCED RAMAN SPECTROSCOPY

At the fabrication of Graphene Field Effect Transistor (GFET), microfabrication process has been extensively used. Microfabrication process has usually left impurities. However, impurities could be much more important at graphene-like two dimensional systems. In this work, pristine and photolithography-applied graphene samples were investigated by Surface Enhanced Raman Spectroscopy (SERS) which is a powerful method to detect molecules even if only one molecule [1- 2]. Furthermore, after the photolithography process, to obtain more clean graphene surface, several methods were applied. The obtained electrical and SERS results were associated and compared to each other's to propound a new lift-off solvents.