Influence of atomizing voltage on fluorine doped tin oxide via spray pyrolysis technique

Synthesis and characterization fluorine-doped tin oxide thin film using spray pyrolysis were coated on a glass substrate by varying the atomizing voltage. The XRD analysis was carried out and the results showed that the deposited films are polycrystalline in nature having the characteristic peaks of tetragonal structure of SnO2. The observed peaks are (110), (101), (200), (211) and the preferential growth was found to be (110) direction. The I/V plots of the material deposited with 3.8 kV, 4.0 kV and 4.2 kV, which represent sample FT1-FT3 showed a non-linear plot and observed to be a non Ohmic semiconducting material. It was also noticed that as the atomizing voltage of the depositing material increases the thickness of the films increases. The resistivity of the material deposited increases and decreases at 4.0 kV as the atomizing voltage and thickness of the films increases. The electrical conductivity of the material deposited increases with respect to the atomizing voltage and thickness, respectively. It was observed that as the optical absorbance and reflectance decreased the wavelength of the incident radiation and transmittance enhanced as the wavelength of the incident radiation increased and the band gap energy of the films were observed to be at the range of 2.70-3.10 eV.