Electrical Properties of InxGa1Journal: International Journal of Engineering Sciences & Research Technology (IJESRT) (Vol.2, No. 2)
Publication Date: 2014-02-28
Authors : Alam;
Page : 272-276
Keywords : : Thin Film; Resistivity; Hall Effect; Mobility; Carrier Concentration; Substrate;
Electrical resistivity and Hall Effect measurement study were grown on single crystal GaAs at 77K and in a temperature region between 273K to 323K. From the measurements it is found that GaAs and In and In0.205Ga0.795As are of p-type. Resistivity of GaAs and In 7.77 × 10-1 Ohm-cm respectively and for samples with x 1.06× 103 Ohm-cm and 2.54 × 103 Ohm were calculated for all samples. Temperature variations of these values are presented an with the previous works. Results obtained are explained in the light of the existing theories and they are found to be in good agreement with theories and also with the published results of other worker.
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