OPTIMUM THICKNESS DETERMINATION TECHNIQUE AS APPLIED TO A SERIES VERTICAL JUNCTION SILICON SOLAR CELL UNDER POLYCHROMATIC ILLUMINATION: EFFECT OF IRRADIATION

The study of an n+-p-p+ type silicon solar cell with vertical junction series illuminated by polychromatic light and under irradiation was realized under steady state. The aim of the work is to determine the optimum thickness of this type of solar cell from the expressions of the backsurface recombination velocity(Sb) obtained by calculating the derivative of the photocurrent density (Jph) with respect to the recombination velocity at the junction (Sf) which tends to large values, translating the short circuit situation. Correlations between the optimum thickness, the irradiation energy flow (φp) and the intensity of the damage coefficient (kl) have been established by a mathematical relationship.