Effect of Doping and Thickness of Si on Superlative Photovoltaic Cell using PC1D
Journal: GRD Journal for Engineering (Vol.5, No. 9)Publication Date: 2020-09-01
Authors : N. H. Vasoya; Revar Dharmendra; K. B. Modi;
Page : 1-6
Keywords : I-V Characteristics; Thickness; Doping; PC1D; Quantum Efficiency;
Abstract
Computer simulation based research is a booming field in solar cell research which helps to develop new high efficient solar cells. From last few decades Photovoltaic cells are widely used solar power to convert solar energy to electrical energy. This converted energy is predicted by means of photovoltaic effects by absorbing photons. Electron and photon pairs are generated from neighbor photons and electrical field is created within area of stack of gap of a P-N junction. So, parameters responsible for efficiency are its characteristics, its components, its dimensions for photovoltaic cell. For reviewing this phenomenon we used well-known software PC1D simulator, and we are able to draw a consultable and ideal parameters that efficient photovoltaic cell should have.
Citation: Dr. N. H. Vasoya, Revar Dharmendra, Dr. K. B. Modi. "Effect of Doping and Thickness of Si on Superlative Photovoltaic Cell using PC1D." Global Research and Development Journal For Engineering 5.9 (2020): 1 - 6.
Other Latest Articles
- Evaluation of Hazard and Minimization of Risk of Nitroglycerin in Pharma Industry using ALOHA & Event Tree Analysis
- Stress Analysis in Cylinder Liner for Tata Indica V2 Diesel Engine
- Safety Management & Emergency Response for Oil and Gas Manufacturing Industries using Hydrogen Fluoride
- Fruits Classification using Convolutional Neural Network
- Security of Data with Enhanced Technique of AASR Protocol for Secure Cross Layer Routing in MANET
Last modified: 2020-08-14 14:53:25