DETERMINATION AND EVOLUTION OF PHOTOELECTRICAL PARAMETERS BASED ON CUINSE2 AND CUINS2 HETEROSTRUCTURE UNDER ILLUMINATION

In this paper, we study in the case of monochromatic and polychromatic illuminations, the behavior of the structure ZnO(n+)/CdS(n)/CuInSe2(p)/ CuInS2(p+) where CuInSe2 represent the base and CuInS2 the substrate. ZnO and CdS are used as window layers. We propose the study of the internal quantum efficiency, the generation rate profiles, the photogenerated minority carrier densities and the resulting photocurrent densities, represented versus the junction depth. We consider photon energy ranging between 1.04 eV (λ = 1.192 μm) and 3.1 eV (λ = 0.4 μm). The study of the profiles of these parameters allows to visualize the behavior of the photocreated carriers in the different regions of the structure, to identify the influence of the electrical and geometric parameters on the collection efficiency, shows the transport direction of the carriers and the effects of the interfaces and surfaces on their collection [1].