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New Type of Voltage Amplifier Based on Field-Effect Transistor with On-Demand Amplification Factor
Journal: International Journal of Mechanical and Production Engineering Research and Development (IJMPERD ) (Vol.10, No. 3)Publication Date: 2020-06-30
Authors : B.M. KAMANOV I.B. SAPAEV F.KH. KHASANOV G. TURAEVA D.B. BABAJANOV L. SUVONOVA A.S. GANIEV;
Page : 14361-14366
Keywords : Hetero Junction; Photosensitivity; Photocurrent; Forward Bias Mode; Integral Light; Monochromatic Radiation;
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Abstract
The results of a study of the photosensitivity of the hetero junction Au-vGaAs:O-nCdS-nInP-Au structure under different bias modes are presented. It has been shown experimentally that independently on the surface to be excited, they differ in photosensitivity in the spectral range of 0.85-0.9 μm and 1.31-1.55 μm, which is associated with photogeneration processes in high-resistance gallium arsenide and photoemission processes from metal to semiconductor.
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Last modified: 2020-09-30 16:21:48