Gate All Around (GAA) FET Modeling Using 2D Material as Channel

Gate All Around (GAA) field effect transistor (FET) is a semiconductor device used in many electronic devices for amplification and switching electrical signals. FET downscaling has been the driving force towards the technological advancement, but continuous scaling down of FET causes problem of high power dissipation, high leakage current, Short Channel Effects (SCEs), excessive process variations and reliability issues. The purpose of this research work is to describe the modeling of the performance of 2D material such as (WSe2, MoSe2, etc.,) nanowire GAA FETs and to study their performance as parameter of the transistor's structure variation like diameter, gate dielectric thickness, and gate dielectric constant. Simulations of ballistic transport in the calculation of the current-voltage (I-V) characteristics for nanoscale double gate FETs. GAA FET channel lengths are getting smaller and high-mobility channel materials are being used, near-ballistic models of MOSFET device physics operation is being realized.