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Hole Transportation in Photocells Based on Hydrogenated Amorphous Silicon

Journal: International Journal of Trend in Scientific Research and Development (Vol.Spe, No. MT)

Publication Date:

Authors : ;

Page : 44-47

Keywords : amorphous semiconductor; hydrogenated silicon; vidicon target; hole traps; traps energy; mobility gap; sticking centers;

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Abstract

In this manuscript, amorphous hydrogenated silicon films were studied by using the photo CVC vidicon target characteristics. In the photo CVC characteristic, a region is observed that obeys the quadratic law. It is explained that the changes contribution in the a Si H dielectric constant and the hole lifetime depending on the applied voltage for obtaining information from this section about the hole transportation mechanism is too significant. Zaynobidinov Sirojidin Zaynobidinovich | Babahodjayev Umar Samsakhodjayevich | Nabiyev A"-™zamjon Botirjonovich | Usmanov Muhammadjon Abduhalil o"-™g"-™li "Hole Transportation in Photocells Based on Hydrogenated Amorphous Silicon" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Special Issue | Modern Trends in Scientific Research and Development, Case of Asia , October 2020, URL: https://www.ijtsrd.com/papers/ijtsrd35835.pdf Paper Url :https://www.ijtsrd.com/other-scientific-research-area/other/35835/hole-transportation-in-photocells-based-on-hydrogenated-amorphous-silicon/zaynobidinov-sirojidin-zaynobidinovich

Last modified: 2020-12-18 13:54:16