SIMULATION OF SILICON OXIDE MATERIAL USING DENSITY FUNCTIONAL THEORY FOR MOSFET APPLICATION

Because of the reduction of structure down to the nanoscale, the recognizable factors of substances does not stay constant but develop into tunable. In this work the electrical properties of silicon oxide material was carried out by using DFT tool. Oxide material is doped with a magnetic material like cobalt which will enhance the moment of electrons in a device and improve the device characteristics. The new structure was proposed which will give the better electrical properties compared to the conventional MOSFET.