Development of Lift-off Process using Plasma Enhanced Chemical Vapour Deposition Silicon dioxide

Lift-off1 is a simple, easy method for realising metal patterns on a substrate, especially for thin metal films such as platinum, gold and titanium which are difficult to be etched by conventional methods. Defining metal lines at sizes below 2µm is difficult by wet and plasma chemistry. We have carried out lift off process experiments using positive photo resist Fuji Film OiR 906-17HD, PECVD silicon dioxide of 1µm, and metal thickness of 1000Å, 1500Å and 2000Å on silicon and quartz wafers. Different dimensions of metal patterns were achieved with 3% accuracy on silicon and quartz wafers. This method can be used for realization of various MEMS2 devices.