Structural, Optical and Photoconductive Properties of Brush Plated Copper Gallium Selenide Films

Copper Gallium selenide films were deposited for the first time by the brush electrodeposition technique. The films were deposited at different bath temperatures in the range of 30 - 80°C at a constant current density of 3.0 mA cm- 2. The films exhibited single phase Copper Gallium selenide. Optical band gap of the film deposited at 80°C was1.68 eV. Room temperature resistivity of the films were in the range of 0.1 - 14.0 ohm cm. Photoconductivity measurements were made at room temperature. Photocurrent Capacitance voltage measurements indicated the films to exhibit p -type behaviour. The flat band potential (Vfb) was 0.60V (SCE) and a carrier density in the range of 2.5 x 1017 cm-3 was obtained. A single Photoluminescence peak was observed at 1.64 eV.