Resistivity XRD, SEM, EDAX of CU/TiN /Si Structure Using Scanning Magnetron Sputtered TiN as Diffusion Barrier

Scanning magnetron target (274mmx174mm) is used to deposit tin film on to si ( p type 10 ohm cm resistivity) substrate for microelecronic application. To deposit best quality tin films with low resistivity 1 parametres. Such as deposition rate, scanning speed, target substrate distance (T. S. D. ) and ion current ma, nitrogen partial pressure, were optimized. Total nitrogen and argon pressure was kept at 5x10-3m bar. TiN films were sputter deposited on to as deposited tin film since it is found as best substitute for diffusion barrier. Thickness of the tin film is determined keeping in consideration diffusion length 2 of copper in tin at different temperature to study microelectronic application for diffusion barrier. Resistivity fig1 of the cu/tin/si structure were obtained using four probe method, low resistivity cu/tin/si structure were obtained using four probe method, low resistivity cu/tin/si structure were preferred. Inter diffusion of silicon and or top metal through the tin film was investigated. XRD fig2 S EM fig3, 4, 5EDAXfig-6 of cu/tin/sistructure is obtained to determine its feasibility for microelectronic application.