Electrical Properties of SiO2/PSi Hetero Junction Prepared by Electrochemical Etching Process
Journal: International Journal of Science and Research (IJSR) (Vol.7, No. 1)Publication Date: 2018-01-05
Authors : Hussain Kazaal; Ramiz Alansari; Kadhim Aadim; Wassan Dhia;
Page : 772-775
Keywords : porous silicon; HF acid;
Abstract
In this paper, the electrical properties of porous silicon (PSi) structure fabricated by using the electrochemical etching process in HF acid, SiO2/PSi hetero junction made by deposition of SiO2 layer on porous silicon. The dark I-V characteristics synthesized by electrochemical etching are presented of hetero junction showed are strong depended on etching time. The ideality factor and saturation current of hetero junction are calculated from I-V under forward bias. C-V measurements confirmed that the prepared hetero junctions are abrupt type.
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