ResearchBib Share Your Research, Maximize Your Social Impacts
Sign for Notice Everyday Sign up >> Login

Electrical Properties of SiO2/PSi Hetero Junction Prepared by Electrochemical Etching Process

Journal: International Journal of Science and Research (IJSR) (Vol.7, No. 1)

Publication Date:

Authors : ; ; ; ;

Page : 772-775

Keywords : porous silicon; HF acid;

Source : Downloadexternal Find it from : Google Scholarexternal

Abstract

In this paper, the electrical properties of porous silicon (PSi) structure fabricated by using the electrochemical etching process in HF acid, SiO2/PSi hetero junction made by deposition of SiO2 layer on porous silicon. The dark I-V characteristics synthesized by electrochemical etching are presented of hetero junction showed are strong depended on etching time. The ideality factor and saturation current of hetero junction are calculated from I-V under forward bias. C-V measurements confirmed that the prepared hetero junctions are abrupt type.

Last modified: 2021-06-28 18:35:45