Optical Confinement Factor of Al0.7Ga0.3As/GaAs and Al0.7Ga0.3N/GaN Quantum Wire Lasers

Recently, optical confinement factor has been established as an effective parameter for evaluating optimal performance by measuring threshold current and optical gain in the nano semiconductor laser diode. The effects of well-width, wire-width, barrier-width and the quantum wire periodic that are associated with the optical confinement factor of Al_0.7 Ga_0.3 As/GaAs and Al_0.7 Ga_0.3 N/GaN quantum wire structures were investigated. The active region of each one of these structures consisted multi-quantum well structures. Once of them (quantum wire structures) was consisting of five GaAs wells and four Al_0.7 Ga_0.3 As barrier layers alternately and the cladding layer is AlAs, while for the other structure is consisting of five GaN wells and four Al_0.7 Ga_0.3 N barrier layers alternately and the cladding layer is AlN. MATLAP software was used to the calculation. For both systems Al_0.7 Ga_0.3 As/GaAs and Al_0.7 Ga_0.3 N/GaN, the optical confinement factor increases by increasing the well-width and wire-width. It has the highest value at the smallest barrier-width, 2nm. Also, the optical confinement factor decreases with increases quantum wire periodic. The values of optical confinement factor for Al_0.7 Ga_0.3 As/GaAs less than Al_0.7 Ga_0.3 N/GaN for the same values of well-width, wire-width and barrier-width.