Reduction of Current Collapse and Leakage Current in AlGaN/GaN Double Channel HEMT

A spectrum of phenomena related to the reliability of AlGaN/GaN double channel high-electron-mobility transistors (HEMT) are investigated. The focus is on trap related phenomena that lead to decrease in the power output i. e. the current collapse. It is widely believed that the current collapse is caused by a virtual gate, i. e. electrons leaked to the surface of the device. Virtual gate has a similar impact on the I-V curve as is observed during the current collapse. If the region of the trapped charge means gate length is relatively small and the doping concentration is high the current collapse was suppressed but increases the leakage current. . In this paper, we report a double channel HEMT with low electron density in the second channel. Wider high trans-conductance region is obtained compared with single-channel HEMT. We have demonstrated the reduction of current collapse and leakage current in AlGaN/GaN double channel (HEMTs) by using extending in gate length, decrement of doping concentration and drain voltages was calibrated. The 2D ATLAS silvaco simulations are done and that simulation model is validated with 28nm and 18nm technology node. The transfer characteristics, threshold voltage, and drive capability of AlGaN/GaN double channel HEMT structure is analysed.