Theoretical Treatment and Investigation of the Expectation Electronic Current of Metal-Semiconductor System

The aim of this research is theoretical study and investigation of the electronic properties cross the metal-semiconductor contacts devices depending on the evaluation the expectation values of electronic current transfer. Barrier Potential heights have been characterized the electronic properties cross interface of metal-semiconductor contacts. Continuum energy levels are assume to the metal-semiconductor devices to fulfelment an ideal contacts at interface for the two difrent solid material states. Dipoles effect on the energies of transfer and the barrier potential heights could be presented in real contacts at metal-semiconductor devices. The expectation of electronic current and transfer barrier potential heights have been evaluated by using the theoretical method with transfer energy is given by the optical and statical dielectric constants of the two material. A MATLAB program designed to predict the expectation electronic current transfer.