Depth profile analysis of nanometric multilayer coatings by radio-frequency glow discharge optical emission spectroscopy

Radiofrequency glow discharge optical emission spectrometry(RF-GD-OES) was used to quantitatively analyze the depth of nanometric Cr/Ni multilayers on a silicon substrate. The technique permitted the rapid and accurate depth profiling of multilayers, down to the nanometer range. The analytical parameters were optimized for the RF-GD-OES depth quantitative analysis of Cr/Ni multilayers on a Si substrate. To validate the RF-GD-OES results, a TEM image was obtained in addition to performing the AES and SIMS depth profiling. confirm the validity of the GD-OES data, TEM imagewas obtained and both AES depth profiling, and SIMS depth profiling were preformed. The findings indicate that RF-GD-OES is a promising analytical tool for the accurate and rapid depth profiling of nanometric metal multilayers on semiconducting substrates.