Low Noise Amplifier (LNA) Design for 57 Ghz to 63 Ghz EHF Narrow Band Systems

Low Noise Amplifier (LNA) of single stage on inductive source degeneration structure for Extremely High Frequency (EHF) is proposed in this paper. The presented LNA for 57GHz-63GHz narrow band system is implemented on 90nm CMOS technology. The proposed technique not only minimizes noise Figureure but also achieves high gain. The simulated prototype has measured a gain magnitude of 18V and achieves input third order intercept point (IIP3) of -5.06dBm, Noise Figureure of less than 1dB (525.20 mdB) and good input matching with small signal amplification (500nV to 500mV).