Growth and Temperature Dependent Photo -Luminescence of In GaAs QW

In the present investigation InGaAs QW is grown by using molecular beam epitaxy (MBE) technique. The composition of Indium in the present investigation is 18 %. The structural characterization is done by using High Resolution X-ray diffraction (HRXRD) method. In the present study we have used temperature dependent photoluminescence (PL) spectroscopy to study the optical characterization. It is found that the intensity and the bandgap decrease with increase in temperature. The elastic constants were determined by the Varshnis equation.